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Document 2263041
Order this document
by MMBT4403LT1/D
SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
3
PNP Silicon
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–40
Vdc
Collector – Base Voltage
VCBO
–40
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
IC
–600
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Collector Current — Continuous
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4403LT1 = 2T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–40
—
–40
—
–5.0
—
—
–0.1
—
–0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
IBEV
Collector Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
ICEX
Vdc
Vdc
Vdc
µAdc
µAdc
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
v
v
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MMBT4403LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
30
60
100
100
20
—
—
—
300
—
—
—
–0.4
–0.75
–0.75
—
–0.95
–1.3
200
—
—
8.5
—
30
1.5
15
0.1
8.0
60
500
1.0
100
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)(3)
(IC = –500 mAdc, VCE = –2.0 Vdc)(3)
hFE
Collector – Emitter Saturation Voltage(3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
Emitter–Base Capacitance
(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hre
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hoe
MHz
pF
pF
kΩ
X 10– 4
—
mmhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
3. Pulse Test: Pulse Width
(VCC = –30 Vdc, VEB = –2.0 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
td
—
15
tr
—
20
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
ts
—
225
tf
—
30
v 300 ms, Duty Cycle v 2.0%.
ns
ns
SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V
– 30 V
200 Ω
< 2 ns
+2 V
+14 V
0
0
1.0 kΩ
– 16 V
10 to 100 µs,
DUTY CYCLE = 2%
Figure 1. Turn–On Time
2
200 Ω
< 20 ns
CS* < 10 pF
1.0 kΩ
CS* < 10 pF
–16 V
1.0 to 100 µs,
DUTY CYCLE = 2%
+ 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT4403LT1
TRANSIENT CHARACTERISTICS
25°C
100°C
10
7.0
5.0
30
VCC = 30 V
IC/IB = 10
Ceb
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.1
0.2 0.3
20
2.0 3.0 5.0 7.0 10
0.5 0.7 1.0
REVERSE VOLTAGE (VOLTS)
30
10
20
Figure 3. Capacitances
300
500
Figure 4. Charge Data
100
100
IC/IB = 10
70
70
VCC = 30 V
IC/IB = 10
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t r , RISE TIME (ns)
t, TIME (ns)
200
30
50 70 100
IC, COLLECTOR CURRENT (mA)
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
300
500
200
t s′, STORAGE TIME (ns)
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts – 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBT4403LT1
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
IC = 1.0 mA, RS = 430 Ω
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ
IC = 100 µA, RS = 1.6 kΩ
6
4
2
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2
IC = 50 µA
100 µA
500 µA
1.0 mA
6
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50 k
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
selected from the MMBT4403LT1 lines, and the same units
This group of graphs illustrates the relationship between
were used to develop the correspondingly–numbered curves
hfe and other “h” parameters for this series of transistors. To
on each graph.
obtain these curves, a high–gain and a low–gain unit were
100 k
700
50 k
hie , INPUT IMPEDANCE (OHMS)
1000
hfe , CURRENT GAIN
500
300
200
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
70
50
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
20 k
10 k
5k
2k
1k
500
200
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
5.0 7.0 10
0.3
0.5 0.7 1.0
2.0
3.0
Figure 10. Current Gain
Figure 11. Input Impedance
5.0 7.0
10
500
10
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
4
0.2
IC, COLLECTOR CURRENT (mAdc)
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
IC, COLLECTOR CURRENT (mAdc)
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
5.0 7.0 10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT4403LT1
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
70
50
100
200
300
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25°C
0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
500
Figure 16. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.5
0.1 0.2
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500
Figure 17. Temperature Coefficients
5
MMBT4403LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
6
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT4403LT1
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
G
C
D
H
K
J
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
7
MMBT4403LT1
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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8
◊
*MMBT4403LT1/D*
Motorola Small–Signal Transistors, FETs and Diodes
Device Data
MMBT4403LT1/D
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