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BF256B N-Channel RF Amplifiers — N-Channel RF Amplifiers

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BF256B N-Channel RF Amplifiers — N-Channel RF Amplifiers
BF256B
N-Channel RF Amplifiers
Features
• This device is designed for VHF / UHF amplifiers
• Sourced from process 50
1
TO-92
1. Gate 2. Source 3. Drain
Ordering Information
Part Number
Top Mark
Package
Packing Method
BF256B
BF256B
TO-92 3L
Bulk
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VDG
Drain-Gate Voltage
30
V
VGS
Gate-Source Voltage
-30
V
IGF
Forward Gate Current
10
mA
-55 to 150
°C
Value
Unit
TJ, TSTG
Parameter
Operating and Storage Temperature Range
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Total Device Dissipation at TA = 25°C
350
mW
Derate Above 25°C
2.8
mW/°C
© 2003 Fairchild Semiconductor Corporation
BF256B Rev. 1.1.0
www.fairchildsemi.com
BF256B — N-Channel RF Amplifiers
November 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Gate-Source Breakdown Voltage
VDS = 0, IG = 1 μA
-30
Gate-Source Voltage
VDS = 15 V, ID = 200 μA
-0.5
-7.5
V
Gate-Source Cut-Off Voltage
VDS = 15 V, ID = 10 nA
-0.5
-8.0
V
IGSS
Gate Reverse Current
VGS = -20 V, VDS = 0
-5
nA
IDSS
Zero-Gate Voltage Drain Current
VDS = 15 V, VGS = 0
6
13
mA
gfs
Common Source Forward
Transconductance
VDS = 15 V, VGS = 0,
f= 1 kHz
4.5
V(BR)GSS
VGS
VGS(off)
© 2003 Fairchild Semiconductor Corporation
BF256B Rev. 1.1.0
V
mmhos
www.fairchildsemi.com
2
BF256B — N-Channel RF Amplifiers
Electrical Characteristics
BF256B — N-Channel RF Amplifiers
Physical Dimensions
D
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration
© 2003 Fairchild Semiconductor Corporation
BF256B Rev. 1.1.0
www.fairchildsemi.com
3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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