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IRFF120 JANTX2N6788 JANTXV2N6788 HEXFET

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IRFF120 JANTX2N6788 JANTXV2N6788 HEXFET
PD-90426D
REPETITIVE AVALANCHE AND dv/dt RATED
®
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
IRFF120
JANTX2N6788
JANTXV2N6788
REF:MIL-PRF-19500/555
100V, N-CHANNEL
Product Summary
Part Number
IRFF120
BVDSS RDS(on)
100V
0.30Ω
ID
6.0A
T0-39
®
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
6.0
3.5
24
20
0.16
±20
0.242
2.2
2.0
5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
09/03/07
IRFF120, JANTX2N6788, JANTXV2N6788
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
g fs
IDSS
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
—
0.10
—
V/°C
—
—
2.0
1.5
—
—
—
—
—
—
—
—
0.30
0.35
4.0
—
25
250
—
—
7.7
0.7
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
18
4.0
9.0
40
70
40
70
—
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Ω
V
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 3.5A Ã
VGS =10V, ID = 6.0A Ã
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 3.5A Ã
VDS= 80V, VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
V GS = -20V
VGS =10V, ID = 6.0A
VDS = 50V
VDD = 35V, ID = 6.0A,
VGS = 10V, RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
350
150
24
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
6.0
24
1.8
240
2.0
Test Conditions
A
V
ns
µC
Tj = 25°C, IS =6.0A, VGS = 0V Ã
Tj = 25°C, IF = 6.0A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
6.25
175
Units
°C/W
Test Conditions
Typical socket mount.
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFF120, JANTX2N6788, JANTXV2N6788
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
4.5V
1
60µs PULSE WIDTH
Tj = 25°C
10
4.5V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (A)
100
T J = 25°C
T J = 150°C
10
VDS = 50V
60µs PULSE WIDTH
1
4
5
6
7
8
9
10
11
12
13
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs.Temperature
3
IRFF120, JANTX2N6788, JANTXV2N6788
13 a & b
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
100
10
T J = 150°C
T J = 25°C
1.0
VGS = 0V
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFF120, JANTX2N6788, JANTXV2N6788
RD
V DS
V GS
RG
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
Fig 9. Maximum Drain Current Vs.
CaseTemperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFF120, JANTX2N6788, JANTXV2N6788
15V
L
VDS
D.U.T
RG
VGS
20V
IAS
DRIVER
+
- VDD
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
10 V
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFF120, JANTX2N6788, JANTXV2N6788
Foot Notes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C,
Peak IL = 2.2A, L = 100µH
 ISD ≤ 6.0A, di/dt ≤ 110A/µs,
VDD≤ 100V, TJ ≤ 150°C
Suggested RG =7.5 Ω
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
LEGEND
2- GATE
1- SOURCE
3- DRAIN
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2007
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