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BSS 84 P SIPMOS Small-Signal-Transistor 

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BSS 84 P SIPMOS Small-Signal-Transistor 
BSS 84 P
SIPMOS Small-Signal-Transistor
Feature
Product Summary
· P-Channel
· Enhancement mode
· Logic Level
· Avalanche rated
· dv/dt rated
VDS
RDS(on)
ID
-60
V
8
W
-0.17
A
PG-SOT-23
3
2
1
Type
Package
Tape and Reel
BSS 84 P
PG-SOT-23
L6327:3000pcs/r. YBs
BSS 84 P
PG-SOT-23
L6433:10000pcs/r. YBs
VPS05161
Marking
Drain
pin 3
Gate
pin1
Source
pin 2
Maximum Ratings, at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TA=25°C
-0.17
TA=70°C
-0.14
Pulsed drain current
I D puls
Unit
-0.68
TA=25°C
EAS
2.6
Avalanche energy, periodic limited by Tjmax
EAR
0.036
Reverse diode dv/dt
dv/dt
-6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
0.36
W
-55... +150
°C
Avalanche energy, single pulse
ID=-0.17 A , VDD=-25V, RGS=25W
mJ
kV/µs
IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev 2.5
Page 1
T j , Tstg
55/150/56
2011-06-01
BSS 84 P
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
-
-
200
@ min. footprint
-
-
350
@ 6 cm 2 cooling area 1)
-
-
300
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 3)
SMD version, device on PCB:
RthJA
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
VGS(th)
-1
-1.5
-2
Static Characteristics
Drain-source breakdown voltage
V
VGS=0, ID =-250µA
Gate threshold voltage, VGS = VDS
ID=-20µA
Zero gate voltage drain current
µA
I DSS
VDS=-60V, VGS=0, TA =25°C
-
-0.1
-1
VDS=-60V, VGS=0, TA =125°C
-
-10
-100
I GSS
-
-10
-100
nA
RDS(on)
-
8
12
W
RDS(on)
-
5.8
8
Gate-source leakage current
VGS=-20V, VDS=0
Drain-source on-state resistance
VGS=-4.5V, ID=-0.14A
Drain-source on-state resistance
VGS=-10V, ID=-0.17A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.5
Page 2
2011-06-01
BSS 84 P
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.065
0.13
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS£2*ID*RDS(on)max ,
ID=-0.14A
Input capacitance
Ciss
VGS=0, VDS=-25V,
-
15
19
Output capacitance
Coss
f=1MHz
-
6
8
Reverse transfer capacitance
Crss
-
2
3
Turn-on delay time
td(on)
VDD=-30V, VGS=-4.5V,
-
6.7
10
Rise time
tr
ID=-0.14A, RG=25W
-
16.2
24.3
Turn-off delay time
td(off)
-
8.6
12.9
Fall time
tf
-
20.5
30.8
-
0.25
0.37
-
0.3
0.45
-
1
1.5
V(plateau) VDD=-48V, ID=-0.17A
-
-3.42
-
IS
-
-
-0.17 A
-
-
-0.68
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=-48V, ID=-0.17A
VDD=-48V, ID=-0.17A,
nC
VGS=0 to -10V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
VGS=0, IF=-0.17A
-
-0.93
Reverse recovery time
trr
VR=-30V, IF=lS,
-
23
34
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
10
15
nC
Rev 2.5
Page 3
-1.24 V
2011-06-01
BSS 84 P
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA)
0.38
parameter: VGS ³ 10 V
BSS 84 P
BSS 84 P
-0.18
W
A
0.32
-0.14
-0.12
0.24
ID
P tot
0.28
-0.1
0.2
-0.08
0.16
0.12
-0.06
0.08
-0.04
0.04
-0.02
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJA = f (tp )
parameter : D = 0 , TA = 25 °C
parameter : D = tp /T
1 BSS 84 P
-10
10 3
A
0
10 2
Z thJA
tp = 170.0µs
/I D
-10
BSS 84 P
K/W
ID
-10
160
°C
TA
=
-1
RD
o
S(
VD
1 ms
S
10 1
n)
D = 0.50
10 ms
0.20
0.10
-10 -2
10 0
0.05
single pulse
0.02
DC
-10 -3 -1
-10
-10
0
-10
1
V
0.01
-10
2
s
10
4
tp
VDS
Rev 2.5
10 -1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
Page 4
2011-06-01
BSS 84 P
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj = 25 °C
parameter: VGS ; Tj = 25 °C
BSS 84 P
Ptot = 0.36W
A
26
l
k
j i
W
h
VGS [V]
g a
-2.5
-0.32
f
ID
-0.28
e
-0.24
-3.5
d
-4.0
e
-4.5
f
-5.0
-5.5
h
-6.0
i
-6.5
j
-7.0
k
-8.0
c
-0.12
l
a
b
c
d
e
f
18
16
14
12
10
h
i
8
-10.0
j
k
6
l
4 V
GS [V] =
-0.04
2
a
-0.5
-1
-1.5 -2
-2.5
-3
-3.5
-4
V
0
0
-5
a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
g
h
i
j
-5.5 -6.0 -6.5 -7.0
ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID = f ( VGS ); |VDS |³ 2 x |ID | x RDS(on)max
gfs = f(ID)
parameter: Tj = 25 °C
0.4
0.16
A
S
0.3
0.12
g fs
- ID
parameter: Tj = 25 °C
0.25
0.1
0.2
0.08
0.15
0.06
0.1
0.04
0.05
0.02
1
2
3
4
V
0
0
6
0.04
0.08
0.12
0.16
A
0.22
-ID
- VGS
Rev 2.5
k
l
-8.0 -10.0
-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38
VDS
0
0
g
20
b
-0.08
0
0
-3.0
c
d g
-0.2
-0.16
b
BSS 84 P
22
R DS(on)
-0.4
Page 5
2011-06-01
BSS 84 P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj )
parameter : ID = -0.17 A, VGS = -10 V
parameter: VGS = VDS
21
W
BSS 84 P
2.4
V
18
98%
16
- V GS(th)
R DS(on)
2
14
12
1.8
1.6
1.4
10
98%
1.2
8
4
0.8
2
0.6
-20
20
60
2%
1
typ
6
0
-60
typ.
°C
100
0.4
-60
180
-20
20
60
100
TA
°C
160
TA
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: VGS =0, f=1 MHz
parameter: Tj , tp = 80 µs
10
2
-10 0
BSS 84 P
A
pF
Ciss
C
IF
-10 -1
Coss
10
1
-10 -2
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10
0
0
5
10
V
20
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
- VDS
Rev 2.5
-10 -3
0
Page 6
2011-06-01
BSS 84 P
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (TA), parameter:
VGS = f (QGate )
ID = -0.17 A , VDD = -25 V, RGS = 25 W
parameter: ID = -0.17 A pulsed; Tj = 25 °C
3
-16
BSS 84 P
V
mJ
V GS
E AS
-12
2
1.5
-10
0,2 VDS max
0,8 VDS max
-8
-6
1
-4
0.5
-2
0
25
45
65
85
105
125
°C
165
0
0
0.2
0.4
0.6
0.8
1
1.2 nC
1.5
QGate
TA
15 Drain-source breakdown voltage
V(BR)DSS = f (TA)
BSS 84 P
-72
V (BR)DSS
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
°C
180
TA
Rev 2.5
Page 7
2011-06-01
BSS 84 P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev 2.5
Page 8
2011-06-01
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